Authors: Gabriel Ferro, S. Rushworth, Jean Camassel, Sandrine Juillaguet, Carole Balloud, Efstathios K. Polychroniadis, Y. Stoimenos, P. Seigle-Ferrand, Jacques Dazord, Yves Monteil, L.M. Smith

281

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

Authors: Taro Nishiguchi, Yoshihiko Mukai, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

285

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy

Authors: H. Takagi, Taro Nishiguchi, S. Ohta, Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino

289

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

Authors: Petia Weih, Volker Cimalla, Thomas Stauden, Ratislav Kosiba, Lothar Spieß, Henry Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, Oliver Ambacher, Joerg Pezoldt

293

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

Authors: Francisco M. Morales, Charbel Zgheib, S.I. Molina, Daniel Araujo, R. García, C. Fernández, A. Sanz-Hervás, Pierre M. Masri, Petia Weih, Thomas Stauden, Oliver Ambacher, Joerg Pezoldt

297