Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

285-288

Citation:

T. Nishiguchi et al., "Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition ", Materials Science Forum, Vols. 457-460, pp. 285-288, 2004

Online since:

June 2004

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[4] S. Nishino, H. Suhara, H. Ono, and H. Matsunami: J. Appl. Phys. Vol. 61 (1987), p.4889.

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