Paper Titles

Growth of SiC Films using Tetraethylsilane
p.269

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
p.277

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
p.281

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
p.285

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
p.289

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297

Stress Control in 3C-SiC Films Grown on Si(111)
p.301

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Structural Analysis of (211) 3C-SiC on (211) Si...

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.285

Citation:

Cite this paper

Online since:

June 2004

Authors:

Taro Nishiguchi, Yoshihiko Mukai, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

Keywords:

(211), 3C-SiC, Orientation, Si Substrate, Stacking Fault, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Nagasawa, T. Kawahara and K. Yagi: Mater. Sci. Forum Vol. 389-393 (2002), p.319. Journal Title and Volume Number (to be inserted by the publisher) 5.

[2] S.L. Wright, H. Kroemer, and M. Inada: J. Appl. Phys. Vol. 55 (1984), p.2916.

[3] P.N. Uppal, and H. Kroemer: J. Appl. Phys. Vol. 58 (1985), p.2195.

[4] S. Nishino, H. Suhara, H. Ono, and H. Matsunami: J. Appl. Phys. Vol. 61 (1987), p.4889.