Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

297-300

Citation:

F. M. Morales et al., "Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111) ", Materials Science Forum, Vols. 457-460, pp. 297-300, 2004

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June 2004

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