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Stress Control in 3C-SiC Films Grown on Si(111)
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Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Development of a High-Throughput LPCVD Process for...

Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

305-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.305

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Online since:

June 2004

Authors:

Xiao An Fu, J. Dunning, Christian A. Zorman, Mehran Mehregany

Keywords:

LPCVD, Micro-Electromechanical System (MEMS), Poly-SiC, Residual Stress, Surface Micromachining

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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