Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows

M.J. Hernández; M. Cervera; J. Piqueras; T. del Caño; J. Jiménez

doi:10.4028/www.scientific.net/MSF.457-460.309

Paper Titles

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297

Stress Control in 3C-SiC Films Grown on Si(111)
p.301

Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
p.305

Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
p.309

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
p.313

Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
p.317

Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
p.321

Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH₃SiH₃
p.325

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Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

309-312

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.309

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Online since:

June 2004

Authors:

M.J. Hernández, M. Cervera, J. Piqueras, T. del Caño, J. Jiménez

Keywords:

Chemical Vapor Deposition (CVD), ECR, Silicon Carbide (SiC), Thin Film

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References

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