Paper Titles

Stress Control in 3C-SiC Films Grown on Si(111)
p.301

Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
p.305

Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
p.309

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
p.313

Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
p.317

Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
p.321

Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH₃SiH₃
p.325

Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction
p.329

Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
p.333

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Low Temperature (320°C) Deposition of Hydrogenated...

Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

317-320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.317

Citation:

Cite this paper

Online since:

June 2004

Authors:

S. Miyajima, A. Yamada, Makoto Konagai

Keywords:

3C-SiC, Hot Wire CVD, Monomethylsilane, SiC on Glass

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: