Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures

M. Smith; R.A. McMahon; M. Voelskow; Wolfgang Skorupa; J. Stoemenos

doi:10.4028/www.scientific.net/MSF.457-460.333

Paper Titles

Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
p.317

Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
p.321

Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH₃SiH₃
p.325

Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction
p.329

Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
p.333

Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
p.339

TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C
p.343

TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
p.347

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
p.351

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Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

333-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.333

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Online since:

June 2004

Authors:

M. Smith, R.A. McMahon, M. Voelskow, Wolfgang Skorupa, J. Stoemenos

Keywords:

3C-SiC, Flashlamp Annealing, FLASiC, Thermal Modelling

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References

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