Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

Efstathios K. Polychroniadis; J. Stoemenos; Gabriel Ferro; Yves Monteil; D. Panknin; Wolfgang Skorupa

doi:10.4028/www.scientific.net/MSF.457-460.351

Paper Titles

Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
p.333

Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
p.339

TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C
p.343

TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
p.347

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
p.351

Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
p.355

TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
p.359

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
p.363

Structural Transformation of Dislocated Micropipes in Silicon Carbide
p.367

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Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.351

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Online since:

June 2004

Authors:

Efstathios K. Polychroniadis, J. Stoemenos, Gabriel Ferro, Yves Monteil, D. Panknin, Wolfgang Skorupa

Keywords:

Annealing, Defect, Thin Film

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References

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