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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Structure and Composition of 3C-SiC:Ge Alloys...

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

293-296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.293

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Online since:

June 2004

Authors:

Petia Weih, Volker Cimalla, Thomas Stauden, Ratislav Kosiba, Lothar Spieß, Henry Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, Oliver Ambacher, Joerg Pezoldt

Keywords:

(Si_1-xC_1-y)Ge_x+y Alloy, Auger Electron Spectroscopy (AES), Molecular Beam Epitaxy, Secondary Ion Mass Spectroscopy (SIMS), TEM

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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