Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

293-296

DOI:

10.4028/www.scientific.net/MSF.457-460.293

Citation:

P. Weih et al., "Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE", Materials Science Forum, Vols. 457-460, pp. 293-296, 2004

Online since:

June 2004

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$35.00

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