Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

Gabriel Ferro; S. Rushworth; Jean Camassel; Sandrine Juillaguet; Carole Balloud; Efstathios K. Polychroniadis; Y. Stoimenos; P. Seigle-Ferrand; Jacques Dazord; Yves Monteil; L.M. Smith

doi:10.4028/www.scientific.net/MSF.457-460.281

Paper Titles

Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
p.265

Growth of SiC Films using Tetraethylsilane
p.269

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
p.277

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
p.281

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
p.285

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
p.289

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Potential of HMDS/C3H8 Precursor System for the...

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

281-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.281

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Online since:

June 2004

Authors:

Gabriel Ferro, S. Rushworth, Jean Camassel, Sandrine Juillaguet, Carole Balloud, Efstathios K. Polychroniadis, Y. Stoimenos, P. Seigle-Ferrand, Jacques Dazord, Yves Monteil, L.M. Smith

Keywords:

3C-SiC, Heteroepitaxy, HexaMethylDisilane, Si(100)

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References

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