Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

277-280

DOI:

10.4028/www.scientific.net/MSF.457-460.277

Citation:

E. Bustarret et al., "Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy", Materials Science Forum, Vols. 457-460, pp. 277-280, 2004

Online since:

June 2004

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$35.00

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