Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

Etienne Bustarret; Daniel Araujo; David Méndez; Francisco M. Morales; F.J. Pacheco; S.I. Molina; Névine Rochat; Gabriel Ferro; Yves Monteil

doi:10.4028/www.scientific.net/MSF.457-460.277

Paper Titles

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
p.261

Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
p.265

Growth of SiC Films using Tetraethylsilane
p.269

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
p.277

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
p.281

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
p.285

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
p.289

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Interfacial Strain and Defects in Si (001)...

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

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Materials Science Forum (Volumes 457-460)

Pages:

277-280

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.277

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Online since:

June 2004

Authors:

Etienne Bustarret, Daniel Araujo, David Méndez, Francisco M. Morales, F.J. Pacheco, S.I. Molina, Névine Rochat, Gabriel Ferro, Yves Monteil

Keywords:

ATR, Si Carbonisation , Strain, TEM

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