Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

289-292

DOI:

10.4028/www.scientific.net/MSF.457-460.289

Citation:

H. Takagi et al., "Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy", Materials Science Forum, Vols. 457-460, pp. 289-292, 2004

Online since:

June 2004

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$35.00

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