Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy

H. Takagi; Taro Nishiguchi; S. Ohta; Tomoaki Furusho; Satoru Ohshima; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.457-460.289

Paper Titles

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
p.277

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
p.281

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
p.285

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
p.289

Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297

Stress Control in 3C-SiC Films Grown on Si(111)
p.301

Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
p.305

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001)...

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.289

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Online since:

June 2004

Authors:

H. Takagi, Taro Nishiguchi, S. Ohta, Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino

Keywords:

6H-SiC(01-14), Photoluminescence (PL), Polytype Transformation, Raman Scattering Spectroscopy, Sublimation Epitaxy

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References

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