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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

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Table of Contents

Paper Title Page

TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C

Authors: Jean Luc Demenet, X. Milhet, Jacques Rabier, P. Cordier

343

TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent

Authors: Kazuhito Kamei, Kazuhiko Kusunoki, S. Munetoh, Toru Ujihara, Kazuo Nakajima

347

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

Authors: Efstathios K. Polychroniadis, J. Stoemenos, Gabriel Ferro, Yves Monteil, D. Panknin, Wolfgang Skorupa

351

Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

Authors: Hosni Idrissi, Maryse Lancin, G. Regula, Bernard Pichaud

355

TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes

Authors: M. Zhang, H. Lendenmann, P. Pirouz

359

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Authors: T.S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, L.M. Sorokin, G.N. Mosina, N.S. Savkina, V.B. Shuman, Alexander A. Lebedev

363

Structural Transformation of Dislocated Micropipes in Silicon Carbide

Authors: Mikhail Yu. Gutkin, A.G. Sheinerman, T.S. Argunova, E.N. Mokhov, Jung Ho Je, Y. Hwu, W. Tsai

367

Deformation of 4H-SiC Single Crystals Oriented for Prism Slip

Authors: M. Zhang, H. McD. Hobgood, P. Pirouz

371

Inelastic Stress Relaxation in Single Crystal SiC Substrates

Authors: Robert S. Okojie

375

Dependence of Micropipe Dissociation on Surface Orientation

Authors: Isaho Kamata, Hidekazu Tsuchida, Syunsuke Izumi, Takeshi Tawara, Kunikaza Izumi

379