Volumes

Materials Science Forum
Vols. 475-479

Materials Science Forum
Vols. 473-474

Materials Science Forum
Vols. 471-472

Materials Science Forum
Vols. 467-470

Materials Science Forum
Vols. 465-466

Materials Science Forum
Vols. 461-464

Materials Science Forum
Vols. 457-460

Materials Science Forum
Vols. 455-456

Materials Science Forum
Vols. 453-454

Materials Science Forum
Vols. 449-452

Materials Science Forum
Vols. 447-448

Materials Science Forum
Vols. 445-446

Materials Science Forum
Vols. 443-444

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460

Materials Science Forum Vols. 457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460

Export:

ToC:

Table of Contents

Paper Title Page

Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC

Authors: L. Storasta, Anne Henry, Peder Bergman, Erik Janzén

469

Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC

Authors: Z. Zolnai, Nguyen Tien Son, Björn Magnusson, Christer Hallin, Erik Janzén

473

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Authors: David J. Meyer, N.A. Bohna, Patrick M. Lenahan, Aivars J. Lelis

477

Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Authors: Giovanni Alfieri, Edouard V. Monakhov, Bengt Gunnar Svensson

481

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

Authors: Michael Weidner, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Takeshi Ohshima

485

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Authors: Mary Ellen Zvanut, V.V. Konovalov, W.C. Mitchel, William D. Mitchell

489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements

Authors: Alfonso Ruggiero, Sebania Libertino, Marco Mauceri, Ricardo Reitano, Paolo Musumeci, Fabrizio Roccaforte, Francesco La Via, Lucia Calcagno

493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC

Authors: Yaroslav Koshka, Michael S. Mazzola

497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates

Authors: Ekaterina N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, William D. Mitchell

501

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

Authors: Masashi Kato, Masaya Ichimura, M. Ichimura, Eisuke Arai, Shingo Sumie, Hidehisa Hashizume

505