Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

473-476

DOI:

10.4028/www.scientific.net/MSF.457-460.473

Citation:

Z. Zolnai et al., "Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 473-476, 2004

Online since:

June 2004

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$35.00

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