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Atomic Computer Simulations of Defect Migration in 3C and 4H-SiC
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Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
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EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
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Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC
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Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
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Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460EPR and Pulsed ENDOR Study of El6 and Related...

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

465-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.465

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Online since:

June 2004

Authors:

T. Umeda, Y. Ishitsuka, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Toshio Kamiya

Keywords:

Carbon Vacancy, ENDOR, EPR, Silicon Antisite, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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