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Paper Titles
Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC
p.461
EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
p.465
Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
p.469
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
p.473
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
p.477
Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
p.481
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
p.485
Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489
Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.477

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Online since:

June 2004

Authors:

David J. Meyer, N.A. Bohna, Patrick M. Lenahan, Aivars J. Lelis

Keywords:

Electron Spin Resonance, Interface States (or Traps), Trapping Centers

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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