Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

477-480

DOI:

10.4028/www.scientific.net/MSF.457-460.477

Citation:

D. J. Meyer et al., "Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors", Materials Science Forum, Vols. 457-460, pp. 477-480, 2004

Online since:

June 2004

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$35.00

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