Paper Titles

Investigations of Possible Nitrogen Participation in the Z₁/Z₂ Defect in 4H-SiC
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Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
p.473

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
p.477

Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
p.481

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
p.485

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Negative-U-Centers in 4H- and 6H-SiC Detected by...

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

485-488

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.485

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Online since:

June 2004

Authors:

Michael Weidner, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner, Takeshi Ohshima

Keywords:

DLTS, Intrinsic-Related Defects, Negative-U Centers, Optical Ionization Energy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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