The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

497-500

Citation:

Y. Koshka and M. S. Mazzola, "The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC ", Materials Science Forum, Vols. 457-460, pp. 497-500, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] Y. Koshka, M.S. Mazzola, William and A. Draper: Appl. Phys. Lett. Vol. 80 (2002), p.4762.

[2] Y. Koshka and M. S. Mazzola: Appl. Phys. Lett. Vol. 79 (2001), p.752.

[3] Y. Koshka, A. Los, M. S. Mazzola and I. Sankin: accepted for publication in Physica B.

[4] Y. Koshka: Appl. Phys. Lett. Vol. 82 (2003), p.3260.

[5] P.J. Dean and and W.J. Choyke: Adv. Phys. Vol. 26 (1977), p.1.

[6] A. Henry, T. Egilsson, I.G. Ivanov and E. Janzen: Mat. Sci. Forum Vol. 338-342 (2000), p.651.

[7] M. S. Mazzola, S. E. Saddow and A. Schöner: Mater. Sci. Forum, Vol. 264-268 (1998), p.119.

[8] Y. Koshka: to be published.