The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC

Yaroslav Koshka; Michael S. Mazzola

doi:10.4028/www.scientific.net/MSF.457-460.497

Paper Titles

Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
p.481

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
p.485

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460The Influence of Recombination-Induced Migration...

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.497

Citation:

Cite this paper

Online since:

June 2004

Authors:

Yaroslav Koshka, Michael S. Mazzola

Keywords:

Defect Migration, Defect Reactions, Hydrogen, Passivation, Photoluminescence (PL)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y. Koshka, M.S. Mazzola, William and A. Draper: Appl. Phys. Lett. Vol. 80 (2002), p.4762.

Google Scholar

[2] Y. Koshka and M. S. Mazzola: Appl. Phys. Lett. Vol. 79 (2001), p.752.

Google Scholar

[3] Y. Koshka, A. Los, M. S. Mazzola and I. Sankin: accepted for publication in Physica B.

Google Scholar

[4] Y. Koshka: Appl. Phys. Lett. Vol. 82 (2003), p.3260.

Google Scholar

[5] P.J. Dean and and W.J. Choyke: Adv. Phys. Vol. 26 (1977), p.1.

Google Scholar

[6] A. Henry, T. Egilsson, I.G. Ivanov and E. Janzen: Mat. Sci. Forum Vol. 338-342 (2000), p.651.

Google Scholar

[7] M. S. Mazzola, S. E. Saddow and A. Schöner: Mater. Sci. Forum, Vol. 264-268 (1998), p.119.

Google Scholar

[8] Y. Koshka: to be published.

Google Scholar