The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

497-500

DOI:

10.4028/www.scientific.net/MSF.457-460.497

Citation:

Y. Koshka and M. S. Mazzola, "The Influence of Recombination-Induced Migration of Hydrogen on the Formation of VSi-H Complexes in SiC ", Materials Science Forum, Vols. 457-460, pp. 497-500, 2004

Online since:

June 2004

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$35.00

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