Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

Masashi Kato; Masaya Ichimura; M. Ichimura; Eisuke Arai; Shingo Sumie; Hidehisa Hashizume

doi:10.4028/www.scientific.net/MSF.457-460.505

Paper Titles

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC
p.489

Defects in He⁺ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
p.493

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513

Annealing Study on Radiation-Induced Defects in 6H-SiC
p.517

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
p.521

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Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

505-508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.505

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Online since:

June 2004

Authors:

Masashi Kato, Masaya Ichimura, M. Ichimura, Eisuke Arai, Shingo Sumie, Hidehisa Hashizume

Keywords:

Bulk SiC Wafers, Excess Carrier Lifetime, Microwave Photoconductivity Decay Method, Net Donor Concentration, Structural Defects

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References

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