Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

505-508

Citation:

M. Kato et al., "Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution ", Materials Science Forum, Vols. 457-460, pp. 505-508, 2004

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June 2004

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DOI: https://doi.org/10.1016/s0921-5107(98)00510-8

[3] A. Galeckas, J. Linnros, M. Frischholz, V. Grivickas: Appl. Phys. Lett., Vol. 79 (2001) p.365.

[4] S. Sumie, F. Ojima, K. Yamashita, K. Iba and H. Hashizume, in preparation for publication.

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