Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films

Tatsuya Okada; Tsunenobu Kimoto; K. Yamai; Hiroyuki Matsunami; F. Inoko

doi:10.4028/www.scientific.net/MSF.457-460.521

Paper Titles

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513

Annealing Study on Radiation-Induced Defects in 6H-SiC
p.517

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
p.521

Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
p.525

Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
p.529

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
p.533

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
p.537

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Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films

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Materials Science Forum (Volumes 457-460)

Pages:

521-524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.521

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Online since:

June 2004

Authors:

Tatsuya Okada, Tsunenobu Kimoto, K. Yamai, Hiroyuki Matsunami, F. Inoko

Keywords:

4H-SiC, Crystallographic Defect, Homoepitaxy, Surface Morphological Defect, TEM

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References

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