Paper Titles

The Influence of Recombination-Induced Migration of Hydrogen on the Formation of V_Si-H Complexes in SiC
p.497

Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
p.501

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
p.505

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
p.509

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
p.513

Annealing Study on Radiation-Induced Defects in 6H-SiC
p.517

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
p.521

Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
p.525

Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
p.529

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Midgap Defects in 4H-, 6H- and 3C-SiC Detected by...

Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

513-516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.513

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Online since:

June 2004

Authors:

Sergey A. Reshanov, Konrad Schneider, Reinhard Helbig, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner

Keywords:

DLOS, Lifetime, Midgap Defect, Time-Resolved Photoluminescence

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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