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Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma
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Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy
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Annealing Study on Radiation-Induced Defects in 6H-SiC
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Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
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Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
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Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
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Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
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SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Formation of Stacking Faults in Diffused SiC...

Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.525

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Online since:

June 2004

Authors:

Stanislav I. Soloviev, Dimitri I. Cherednichenko, Tangali S. Sudarshan

Keywords:

Diffusion, Electroluminescence, PiN Diode, Stacking Fault

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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