Paper Titles

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
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Formation of Stacking Faults in Diffused SiC p⁺/n^-/n⁺ and p⁺/p^-/n⁺ Diodes
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Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
p.529

Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
p.537

SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555

Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Partial Dislocations and Stacking Faults in 4H-SiC...

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

537-542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.537

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Online since:

June 2004

Authors:

Mark E. Twigg, Robert E. Stahlbush, M. Fatemi, Steve Arthur, Jeffery B. Fedison, Jesse B. Tucker, Shao Ping Wang

Keywords:

4H-SiC, Dislocation, PiN Diode, Stacking Fault, TEM

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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