Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

537-542

Citation:

M. E. Twigg et al., "Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 537-542, 2004

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June 2004

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[1] J. Q. Liu, M. Skowronski, C. Hallin, R. Soderholm, and H. Lendemann, Appl. Phys. Lett. Vol. 80 (2001), p.749.

[2] R. E. Stahlbush, M. Fatemi, J. B. Fedison, S. D. Arthur, L. B. Rowland, and S. Wang, J. Electron. Mater. Vol. 31 (2002), p.827.

[3] M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker, and S. Wang, Appl. Phys. Lett. Vol. 82 (2003), p.2410.

[4] A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. Vol. 81 (2002), p.883.

[5] W. M. Vetter and M. Dudley, Philos. Mag. A Vol. 81 (2001), p.2885.

[6] X. J. Ning and P. Pirouz, J. Mater. Res. Vol. 11 (1996), p.884.

[7] P. Pirouz, J. L. Demenet, and M. H. Hong Vol. 81 (2001), p.1207.

[8] V. Tillay, F. Pailloux, M. F. Denanot, P. Pirouz, J. Rabier, J. L. Demenet, and J. F. Barbot, Eur. Phys. J. -Appl. Phys. Vol. 2 (1998), p.111.

DOI: https://doi.org/10.1051/epjap:1998173

[9] M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker, and S. Wang, submitted to J. Electronic Mater.

[10] M. S. Miao, S. Limpijumnong, and W. R. L. Lambrecht, Appl. Phys. Lett. Vol. 79 (2002), p.4360.

[11] P. G. Neudeck, J. A. Powell, G. M. Beheim, E. L. Beanvage, P. B. Abel, A. J. Trunek, D. J. Spry, M. Dudley, and W. M. Vetter, J. Appl. Phys. Vol. 92 (2002), p.2391.

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