Paper Titles

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
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SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555

Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
p.565

Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
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Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Further Investigation of Silicon Vacancy-Related...

Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

561-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.561

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Online since:

June 2004

Authors:

John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan

Keywords:

Electron Irradiation, Photoluminescence Microscopy, Silicon Vacancy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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