Paper Titles

Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
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Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
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Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
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Photoluminescence Mapping of a SiC Wafer in Device Processing
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Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
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Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
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Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
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Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
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Photoluminescence Study of C-H and C-D Centers in 4H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Spontaneous Polarization of 4H SiC Determined from...

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

573-576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.573

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Online since:

June 2004

Authors:

Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Ute Kaiser, Günter Wagner, Mike F. MacMillan

Keywords:

Intrinsic Excitons, Polytype Inclusions, Quantum Well, Spontaneous Polarization

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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