Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC

Ivan G. Ivanov; Erik Janzén

doi:10.4028/www.scientific.net/MSF.457-460.585

Paper Titles

Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569

Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
p.573

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
p.577

Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
p.581

Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
p.585

Photoluminescence Study of C-H and C-D Centers in 4H SiC
p.589

Optical Characterization of Full SiC Wafer
p.593

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
p.597

Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
p.601

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Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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585-588

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.585

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June 2004

Authors:

Ivan G. Ivanov, Erik Janzén

Keywords:

Donor-Acceptor Pair Luminescence, Photoluminescence Excitation Spectroscopy

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References

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