Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

601-604

DOI:

10.4028/www.scientific.net/MSF.457-460.601

Citation:

X. Y. Ma et al., "Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research", Materials Science Forum, Vols. 457-460, pp. 601-604, 2004

Online since:

June 2004

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$35.00

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