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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Nondestructive Defect Characterization of SiC...

Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

601-604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.601

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Online since:

June 2004

Authors:

Xian Yun Ma, Michael Dudley, Tangali S. Sudarshan

Keywords:

Characterization, Defect, Growth Pit, PLM, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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