Raman Scattering by Coupled Phonon-Plasmon Modes

L.A. Falkovsky

doi:10.4028/www.scientific.net/MSF.457-460.613

Paper Titles

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
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Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
p.601

Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
p.605

Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
p.609

Raman Scattering by Coupled Phonon-Plasmon Modes
p.613

Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
p.621

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
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Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Raman Scattering by Coupled Phonon-Plasmon Modes

Raman Scattering by Coupled Phonon-Plasmon Modes

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.613

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Online since:

June 2004

Authors:

L.A. Falkovsky

Keywords:

Coulomb Screening, Electron-Phonon Interactions, Phonon-Plasmon Modes

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References

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