Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
p.601
p.601
Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
p.605
p.605
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
p.609
p.609
Raman Scattering by Coupled Phonon-Plasmon Modes
p.613
p.613
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
p.617
p.617
Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
p.621
p.621
Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
p.625
p.625
Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
p.629
p.629
Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
p.633
p.633
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
617-620
Citation:
Online since:
June 2004
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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