Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy

Toru Ujihara; S. Munetoh; Kazuhiko Kusunoki; Kazuhito Kamei; N. Usami; K. Fujiwara; G. Sazaki; Kazuo Nakajima

doi:10.4028/www.scientific.net/MSF.457-460.633

Paper Titles

Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
p.617

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
p.621

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
p.625

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
p.629

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
p.633

Low Temperature Annealing of Optical Centres in 4H SiC
p.637

Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
p.641

On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
p.645

Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
p.649

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Crystal Quality Evaluation of 6H-SiC Layers Grown...

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

633-636

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.633

Citation:

Cite this paper

Online since:

June 2004

Authors:

Toru Ujihara, S. Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, N. Usami, K. Fujiwara, G. Sazaki, Kazuo Nakajima

Keywords:

6H-SiC, Carrier Density, Crystal Quality, Liquid Phase Epitaxy (LPE), Micropipe, Raman Spectroscopy, Stress

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C.M. Balkas, A.A. Maltsev, M.D. Roth, V.D. Heydemann, M. Sharma and N.K. Yushin: Mater. Sci. Forum Vol. 389-393 (2002), p.59.

DOI: 10.4028/www.scientific.net/msf.389-393.59

Google Scholar

[2] A. Okamoto, T. Seno, N. Sugiyama, F. Hirose, K. Hara, T. Tani, D. Nakamura, N. Kamiya and S. Onda: Mater. Sci. Forum Vol. 389-393 (2002), p.103.

DOI: 10.4028/www.scientific.net/msf.389-393.103

Google Scholar

[3] N. Schulze, D.L. Barrett, G. Pensl, S. Rohmfeld and M. Hundhausen: Mat. Sci. Eng. B 61-62 (1999), p.44.

Google Scholar

[4] R. Yakimova, M. Tuominen, A.S. Bakin, J.O. Fornell, A. Vehanen and E. Janzén: Inst. Phys. Conf. Ser. 142 (1996), p.101.

Google Scholar

[5] S. Nakashima and H. Harima: phys. stat. sol. (a) 162 (1997), p.39.

Google Scholar

[6] T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima: Jpn. J. Appl. Phys. 42 (2003), p. L217.

DOI: 10.1143/jjap.42.l217

Google Scholar