On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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645-648

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R. Weingärtner et al., "On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 645-648, 2004

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June 2004

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