On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

645-648

DOI:

10.4028/www.scientific.net/MSF.457-460.645

Citation:

R. Weingärtner et al., "On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 645-648, 2004

Online since:

June 2004

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$35.00

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