On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC

Roland Weingärtner; Peter J. Wellmann; Albrecht Winnacker

doi:10.4028/www.scientific.net/MSF.457-460.645

Paper Titles

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
p.629

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
p.633

Low Temperature Annealing of Optical Centres in 4H SiC
p.637

Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
p.641

On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
p.645

Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
p.649

Brillouin Scattering Studies of Surface Acoustic Waves in SiC
p.653

Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
p.657

Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
p.661

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On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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645-648

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.645

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Online since:

June 2004

Authors:

Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Keywords:

Absorption Band, Cross Section, Hall-Effect, Inequivalent Lattice Sites, Nitrogen Donor

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