Paper Title:
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
645-648
DOI
10.4028/www.scientific.net/MSF.457-460.645
Citation
R. Weingärtner, P. J. Wellmann, A. Winnacker, "On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 645-648, 2004
Online since
June 2004
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