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Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

629-632

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.629

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Online since:

June 2004

Authors:

Mitsuo Okamoto, Ryouji Kosugi, Shinichi Nakashima, Kenji Fukuda, Kazuo Arai

Keywords:

4H-SiC, Crystallinity, DUV Excitation Raman Spectroscopy, Low Temperature Growth, Microwave Plasma Chemical Vapor Deposition (microwave PCVD), Morpholoy, Scanning Electron Microscope (SEM)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. A. Cooper, S-H. Ryu, Y. Li, M. Matin, J. Spitz, D. T. Morisette, H. M. Mcglothlin, M. K. Das, M. R. Melloch, M. A. Capano and J. M. Woodall: Mat. Res. Soc. Symp. Proc. Vol. 572 (1999), p.3

DOI: 10.1557/proc-572-3

[2] H. Matsunami: Mat. Sci. Forum Vol. 338-342 (2000), p.125

[3] M. Okamoto, R. Kosugi, Y. Tanaka, D. Takeuchi, S. Nakashima, S. Nishizawa, K. Fukuda, H. Okushi and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p.299

DOI: 10.4028/www.scientific.net/msf.389-393.299

[4] S. Nakashima, H. Okumura, T. Yamamoto, R. Shimidzu: unpublished

[5] T. Tomita, S. Sito, M. Baba, M. Hundhausen, T. Suemoto, and S. Nakashima: Phys. Rev. B Vol. 62 (2000), p.12896

[6] H. Harima, S. Nakashima and T. Uemura, J. Appl. Phys. Vol. 78 (1995), p.(1996)

[7] Y. Catherine, G. Turban and B. Grolleau: Thin Solid Films, Vol. 76 (1981), p.23 Fig. 3 AFM image for sample #4 (grown at a C/Si ratio of 0.4 for a SiH4 flow rate of 0.020sccm).

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