Low Temperature Annealing of Optical Centres in 4H SiC

John W. Steeds; S.A. Furkert; J.M. Hayes; W. Sullivan

doi:10.4028/www.scientific.net/MSF.457-460.637

Paper Titles

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
p.621

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
p.625

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
p.629

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
p.633

Low Temperature Annealing of Optical Centres in 4H SiC
p.637

Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
p.641

On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
p.645

Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
p.649

Brillouin Scattering Studies of Surface Acoustic Waves in SiC
p.653

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Low Temperature Annealing of Optical Centres in 4H SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

637-640

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.637

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Online since:

June 2004

Authors:

John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan

Keywords:

Carbon Interstitial, Electron Irradiation, Photoluminescence Microscopy

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References

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