Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Soo Hyung Seo; Ju Hwan Park; Joon Suk Song; Myung Hwan Oh

doi:10.4028/www.scientific.net/MSF.457-460.625

Paper Titles

Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
p.609

Raman Scattering by Coupled Phonon-Plasmon Modes
p.613

Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
p.617

Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
p.621

Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method
p.625

Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
p.629

Crystal Quality Evaluation of 6H-SiC Layers Grown by Liquid Phase Epitaxy around Micropipes using Micro-Raman Scattering Spectroscopy
p.633

Low Temperature Annealing of Optical Centres in 4H SiC
p.637

Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
p.641

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Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

625-628

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.625

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Online since:

June 2004

Authors:

Soo Hyung Seo, Ju Hwan Park, Joon Suk Song, Myung Hwan Oh

Keywords:

4H-SiC, 6H-SiC, Micro-Raman Spectroscopy, Sublimation

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References

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