Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

625-628

Citation:

S. H. Seo et al., "Micro-Raman Investigation of Growth-Induced Defects in 6H and 4H SiC Crystals Grown by Sublimation Method", Materials Science Forum, Vols. 457-460, pp. 625-628, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] G. Augustine, V. Balakrishna, and C.D. Brandt, Journal of Crystal Growth, Vol. 211 (2000), p.339.

[2] N. Ohtani, J. Takahashi, M. Katsuno, H. Yashiro, and M. Kanaya, Electronics and Comm. in Japan, Part 2, Vol. 81, No. 6 (1998), p.8.

[3] E. Martin, J. Jimenez, and M. Chafaf, Solid State Electronics, Vol. 42, No. 12 (1998) p.2309.

[4] S. Nakashima and H. Harima, phys. stat. sol. (a) Vol. 162 No. 39 (1997), p.39.

[5] H. Okumura, E. Sakuma, J.H. Lee, H. Mukaida, S. Misawa, K. Endo, and S. Yoshida, Journal of Appl. Phys. Vol. 61 No. 3 (1987), p.1134.