Specificity of Electron Impact Ionization in Superstructure Silicon Carbide

Vladimir Ilich Sankin; Pavel P. Shkrebiy; N.S. Savkina; Alla A. Lepneva

doi:10.4028/www.scientific.net/MSF.457-460.661

Paper Titles

On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
p.645

Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
p.649

Brillouin Scattering Studies of Surface Acoustic Waves in SiC
p.653

Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
p.657

Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
p.661

Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
p.665

Electrical Characterization of Semi-Insulating 6H-SiC Substrates
p.669

Impact Ionization Coefficients of 4H-SiC
p.673

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677

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Specificity of Electron Impact Ionization in Superstructure Silicon Carbide

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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661-664

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.661

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Online since:

June 2004

Authors:

Vladimir Ilich Sankin, Pavel P. Shkrebiy, N.S. Savkina, Alla A. Lepneva

Keywords:

Bragg Reflection, Electrical Field, Field Induced Localisation, Impact Ionisation, Miniband, Natural Superlattice, Silicon Carbide (SiC), Wannier-Stark Localization

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References

[1] С. van Opdorp, J. Vrakking: J. Appl. Phys., 40, (1969), p.2320.

Google Scholar

[2] V.I. Sankin, Yu.A. Vodakov, D.P. Litvin: Sov. Phys. Semicond. 18, (1984), p.2146.

Google Scholar

[3] Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, et al.: Sov. Phys. Semicond. 19, (1985), p.502.

Google Scholar

[4] P.J. Price: IBM J. Res. Dev., 17, (1973). p.39.

Google Scholar

[5] D.L. Andersen , E.J. Aas: J. Appl. Phys., 44, 8, (1973) p.3721.

Google Scholar

[6] R.A. Suris, B.S. Schamkhalova: Sov. Phys. Semicond., 18, (1984), p.738.

Google Scholar

[7] V. Sankin, A. Naumov: Superlattices and Microsructures, 10, 3, (1991) p.353.

Google Scholar

[8] V.I. Sankin and I.A. Stolichnov: JETP Lett, 64, (1996) p.114.

Google Scholar

[9] A. Rabinovitch, J. Zak: Phys. Rev. B, 4, (1971) p.2358.

Google Scholar

[10] L. Kleinman: Phys. Rev. B, 41, (1990) p.3857.

Google Scholar

[11] N L. Chupricov: J. Phys.: Condens. Matter 11, (1999) p.1069.

Google Scholar