Electrical Characterization of Semi-Insulating 6H-SiC Substrates

Edward M. Sanchez; J. Wan; Shao Ping Wang; Mark J. Loboda; Can Hua Li; Marek Skowronski

doi:10.4028/www.scientific.net/MSF.457-460.669

Paper Titles

Brillouin Scattering Studies of Surface Acoustic Waves in SiC
p.653

Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
p.657

Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
p.661

Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
p.665

Electrical Characterization of Semi-Insulating 6H-SiC Substrates
p.669

Impact Ionization Coefficients of 4H-SiC
p.673

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677

Electrochemical C-V Profiling of n-Type 4H-SiC
p.681

Impurity Conduction Observed in Al-Doped 6H-SiC
p.685

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Electrical Characterization of Semi-Insulating 6H-SiC Substrates

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

669-672

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.669

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Online since:

June 2004

Authors:

Edward M. Sanchez, J. Wan, Shao Ping Wang, Mark J. Loboda, Can Hua Li, Marek Skowronski

Keywords:

6H-SiC, Resistivity, Semi-insulating (SI)

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