Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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665-668

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G. Tamulaitis et al., "Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 665-668, 2004

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June 2004

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[1] J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. Vol. 78 (1995), p.3839.

[2] H. M. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. Vol. 66 (1995), p.1364.

[3] M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker, Appl. Surface Sci. Vol. 184 (2001), p.84.

[4] M. Bickermann, R. Weingärtner, A. Winnacker, J. Cryst. Growth, Vol. 254 (2003), p.390.

[5] K. Maier, J. Schneider, W. Wilkening, S. Leibenzeder, and R. Stein, Mater. Sci. Eng. Vol. B11 (1992), p.27.

[6] A. E. Evwaraye, S. R. Smith, and W. C. Mitchel, J. Appl. Phys. Vol. 79 (1996), p.253.

[7] J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. Vol. 78 (1995), 3160.

[8] J. Schneider, H. D. Muller, K. Maier, W. Wilkening, F. Fuchs, A. Dornen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. Vol. 56, (1990) p.1184.

DOI: https://doi.org/10.1063/1.102555

[9] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W J. Choyke, A. Schöner, N. Nordell, Phys. Status Solidi (a) Vol. 162 (1997), p.199.

DOI: https://doi.org/10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

[10] P. Grivickas, J. Linnros, and V. Grivickas, Materials Science Forum, Vol. 338-342 (2000), 671.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.671

[11] P. Grivickas, A. Martinez, I. Mikulskas, V. Grivickas, R. Tomašiūnas, J. Linnros, and U. Lindefelt, Materials Science Forum, Vol. 353-356 (2001), p.353.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.353

[12] A. Galeckas, J. Linnros, M. Frischholz, K. Rottner, N. Nordell, S. Karlsson, V. Grivickas, Materials Science and Engineering B, Vol. 61-62 (1999, ) p.239.

DOI: https://doi.org/10.1016/s0921-5107(98)00510-8

[13] A. Galeckas, J. Linnros, M. Frischholz, and V. Grivickas, Appl. Phys. Lett., Vol. 79 (2001), p.365.

[14] A. Miller, In Nonlinear Optics in Semiconductors II. Semiconductors and Semimetals, Vol. 59, p.287, E. Garmire and A. Kost (Eds. ) (Academic Press, San Diego, London, Boston, New York, Sydney, Tokyo, Yoronto, 1999).

[15] M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Editors. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC and SiGe (John Wiley and Sons, New York, 2001), p.110.

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