Electrochemical C-V Profiling of n-Type 4H-SiC

Konstantinos Zekentes; M. Kayambaki; S. Mousset

doi:10.4028/www.scientific.net/MSF.457-460.681

Paper Titles

Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
p.665

Electrical Characterization of Semi-Insulating 6H-SiC Substrates
p.669

Impact Ionization Coefficients of 4H-SiC
p.673

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677

Electrochemical C-V Profiling of n-Type 4H-SiC
p.681

Impurity Conduction Observed in Al-Doped 6H-SiC
p.685

Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
p.689

High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
p.693

As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
p.697

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Electrochemical C-V Profiling of n-Type 4H-SiC

Electrochemical C-V Profiling of n-Type 4H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

681-684

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.681

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Online since:

June 2004

Authors:

Konstantinos Zekentes, M. Kayambaki, S. Mousset

Keywords:

C-V Measurement, Doping Profile, Electrolytic Etching, Porous 4H-SiC Layer

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