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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Impact Ionization Coefficients of 4H-SiC

Impact Ionization Coefficients of 4H-SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

673-676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.673

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Online since:

June 2004

Authors:

Tetsuo Hatakeyama, Takatoshi Watanabe, Kazutoshi Kojima, Nobuyuki Sano, K. Shiraishi, Mitsuhiro Kushibe, Seiji Imai, Takashi Shinohe, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

Keywords:

4H-SiC, Anisotropy, Breakdown Voltage, Device Simulator, Impact Ionisation

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[3] S. Nakamura, H. Kumagai, T. Kimoto, and H. Matsunami: Appl. Phys. Lett. May 6, Vol. 80 (2002), p.3355.

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[5] E. Bellotti, H-E Nilsson, K. F. Brennan, P. P Ruden, and R. Trew: J. of Appl. Phys. Vol. 87(2000), p.3864 Corresponding author: tetsuo2. hatakeyama@toshiba. co. jp, Phone: +81-44-549-2142, Fax: +81-44-520-1501.