Impact Ionization Coefficients of 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

673-676

Citation:

T. Hatakeyama et al., "Impact Ionization Coefficients of 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 673-676, 2004

Online since:

June 2004

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[1] A. O Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt: Appl. Phys. Lett. Vol. 71 (1997) , p.90.

[2] R. Raghunathan, and B. J. Baliga: Solid-State Electron. Vol. 43 (1999), p.199.

[3] S. Nakamura, H. Kumagai, T. Kimoto, and H. Matsunami: Appl. Phys. Lett. May 6, Vol. 80 (2002), p.3355.

[4] A. G. Chynoweth: Phys. Rev., vol. 109, no. 5 (1958), p.1537.

[5] E. Bellotti, H-E Nilsson, K. F. Brennan, P. P Ruden, and R. Trew: J. of Appl. Phys. Vol. 87(2000), p.3864 Corresponding author: tetsuo2. hatakeyama@toshiba. co. jp, Phone: +81-44-549-2142, Fax: +81-44-520-1501.

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