Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

677-680

Citation:

L. Kasamakova-Kolaklieva et al., "Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 677-680, 2004

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June 2004

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