Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

L. Kasamakova-Kolaklieva; L. Storasta; Ivan G. Ivanov; Björn Magnusson; Sylvie Contreras; C. Consejo; Julien Pernot; Marcin Zielinski; Erik Janzén

doi:10.4028/www.scientific.net/MSF.457-460.677

Paper Titles

Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
p.661

Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
p.665

Electrical Characterization of Semi-Insulating 6H-SiC Substrates
p.669

Impact Ionization Coefficients of 4H-SiC
p.673

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677

Electrochemical C-V Profiling of n-Type 4H-SiC
p.681

Impurity Conduction Observed in Al-Doped 6H-SiC
p.685

Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
p.689

High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
p.693

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Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

677-680

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.677

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Online since:

June 2004

Authors:

L. Kasamakova-Kolaklieva, L. Storasta, Ivan G. Ivanov, Björn Magnusson, Sylvie Contreras, C. Consejo, Julien Pernot, Marcin Zielinski, Erik Janzén

Keywords:

Al Doping, Hall-Effect, p-Type 4H-SiC

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