Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility

N.S. Saks; M.G. Ancona; Lori A. Lipkin

doi:10.4028/www.scientific.net/MSF.457-460.689

Paper Titles

Impact Ionization Coefficients of 4H-SiC
p.673

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
p.677

Electrochemical C-V Profiling of n-Type 4H-SiC
p.681

Impurity Conduction Observed in Al-Doped 6H-SiC
p.685

Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
p.689

High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures
p.693

As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
p.697

Impact Ionization in α-SiC and Avalanche Photoamplifiers
p.701

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
p.705

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Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility

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Materials Science Forum (Volumes 457-460)

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689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.689

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Online since:

June 2004

Authors:

N.S. Saks, M.G. Ancona, Lori A. Lipkin

Keywords:

Anisotropic Mobility, Hall-Effect, MOS Inversion Layer, van der Pauw

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