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Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

705-710

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.705

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Online since:

June 2004

Authors:

Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel'chuk, D.V. Davydov, Anders Hallén, Andrey O. Konstantinov, A. Nikiforov

Keywords:

Deep Level, Defect, Epitaxial Layer, Irradiation, Neutron, Silicon Carbide (SiC)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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