Paper Titles

Impact Ionization in α-SiC and Avalanche Photoamplifiers
p.701

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
p.705

The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
p.711

The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
p.715

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
p.719

In-Situ Er-Doping of SiC Bulk Single Crystals
p.723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Uniform Axial Charge Carrier Concentration in...

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

719-722

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.719

Citation:

Cite this paper

Online since:

June 2004

Authors:

Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Roland Weingärtner, Ulrike Künecke, Albrecht Winnacker

Keywords:

Boron, Powder Source, p-Type SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M. Bickermann, B.M. Epelbaum, D. Hofmann, T.L. Straubinger, R. Weingärtner and A. Winnacker: J. Crystal Growth Vol. 233 (2001), p.211.

DOI: 10.1016/s0022-0248(01)01579-2

[2] M. Bickermann, D. Hofmann, T.L. Straubinger, R. Weingärtner and A. Winnacker: Mater. Sci. Forum Vol. 389-393 (2002), p.139.

DOI: 10.4028/www.scientific.net/msf.389-393.139

[3] D. Hofmann, R. Eckstein, M. Kölbl, Y. Makarov, St.G. Müller, E. Schmitt, A. Winnacker,R. Rupp, R. Stein and J. Völkl: J. Crystal Growth Vol. 174 (1997), p.669.

DOI: 10.1016/s0022-0248(97)00037-7

[4] R. Weingärtner, P.J. Wellmann, M. Bickermann, D. Hofmann, T.L. Straubinger and A. Winnacker: Appl. Phys. Lett. Vol. 80, No. 1 (2002), p.70.

DOI: 10.1063/1.1430262

[5] Z.G. Herro, P.J. Wellmann, R. Püsche, M. Hundhausen, L. Ley, M. Maier, P. Masri and A. Winnacker: J. Crystal Growth Vol. 258 (2003), p.261.

DOI: 10.1016/s0022-0248(03)01538-0

[6] W.C. Mitchel, M. Roth, A.O. Evwarawe, P.W. Yu and S.R. Smith: J. of Electronic Materials Vol. 25 (1996), p.863.