Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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727-730

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P. Desperrier et al., "Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source ", Materials Science Forum, Vols. 457-460, pp. 727-730, 2004

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June 2004

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[1] M. Laube, F. Schmid; G. Pensl, G. Wagner: Mater. Sci. Forum, Vol. 389-393 (2002), p.791.

[2] H. Heissenstein, R. Helbig: Mater. Sci. Forum, Vol. 353-356 (2001), p.369.

[3] T. Troffer, C. Peppermüller, G. Pensl, K. Rottner, and A. Schöner: J. Appl. Phys. 80 (7) (1996), p.3739.

DOI: https://doi.org/10.1063/1.363325

[4] T.L. Straubinger, P.J. Wellmann, A. Winnacker: Mater. Sci. Forum, Vol. 353-356 (2001), p.33.

[5] R. Weingärtner, P.J. Wellmann, M. Bickermann, D. Hofmann, T.L. Straubinger, and A. Winnacker: Appl. Phys, Lett., Vol. 80(1) (2002), p.70.

[6] D.J. Larkin: Phys. Status Solidi B 202, 305 (1997), p.309.

[7] R.C. Glass, D. Henschall, V.F. Tsvetkov, C.H. Carter, Jr.: Phys. Status Solidi B 202 (1997) p.149.

[8] Yu. A. Vodakov, A.D. Roenkov, M.G. Ramm, E.N. Mokhov, Yu.N. Makarov: Phys. Status Solidi B 202 (1997) p.17.

[9] T.L. Straubinger, T.L., M. Bickermann, R. Weingärtner, P.J. Wellmann, and A. Winnacker: J. Cryst. Growth, Vol. 240 (2002), p.117.

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