Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

727-730

DOI:

10.4028/www.scientific.net/MSF.457-460.727

Citation:

P. Desperrier et al., "Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source ", Materials Science Forum, Vols. 457-460, pp. 727-730, 2004

Online since:

June 2004

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$35.00

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