Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

Patrick Desperrier; Ralf Müller; Albrecht Winnacker; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.457-460.727

Paper Titles

The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
p.711

The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
p.715

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
p.719

In-Situ Er-Doping of SiC Bulk Single Crystals
p.723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739

Formation of SiC Delta-Doped-Layer Structures by CVD
p.743

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Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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727-730

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.727

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Online since:

June 2004

Authors:

Patrick Desperrier, Ralf Müller, Albrecht Winnacker, Peter J. Wellmann

Keywords:

Doping, M-PVT, Phosphorous, Silicon Carbide (SiC)

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