Paper Titles
In-Situ Er-Doping of SiC Bulk Single Crystals
p.723
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739
Formation of SiC Delta-Doped-Layer Structures by CVD
p.743
As-Grown 4H-SiC Epilayers with Magnetic Properties
p.747
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
p.751
Non-Contact Doping Profiling in Epitaxial SiC
p.755

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2003 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

739-742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.739

Citation:

Cite this paper

Online since:

June 2004

Authors:

Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Aluminum (Al), Bunching, Chemical Vapor Deposition (CVD), Facet, Zigzag Step

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] W. Choyke, H. Matsunami and G. Pensl: Silicon Carbide (John Wiley & Sons, New York 1997).

Google Scholar

[2] T. Yamamoto, T. Kimoto and H. Matsunami: Mat. Sci. Forum Vols. 264-268 (1998), p.111.

Google Scholar

[3] U. Forsberg, Ö. Danielsson, A. Henry, M. Linnarsson and E. Janzén: J. Cryst. Growth Vol. 253 (2003), p.340.

Google Scholar

[4] H. Matsunami and T. Kimoto: Mat. Sci. Eng., Vol. R20 (1997), p.125.

Google Scholar

[5] G. Wagner, W. Leitenberger, K. Irmscher, F. Schmid, M. Laube and G. Pensl: Mater. Sci. Forum Vols. 389-393 (2002), p.207.

DOI: 10.4028/www.scientific.net/msf.389-393.207

Google Scholar

[6] K. Kojima, T. Suzuki, S. Kuroda and J. Noshino and K. Arai: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L637.

Google Scholar