Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition

Tomoaki Hatayama; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.457-460.739

Paper Titles

In-Situ Er-Doping of SiC Bulk Single Crystals
p.723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739

Formation of SiC Delta-Doped-Layer Structures by CVD
p.743

As-Grown 4H-SiC Epilayers with Magnetic Properties
p.747

Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
p.751

Non-Contact Doping Profiling in Epitaxial SiC
p.755

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Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

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739-742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.739

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Online since:

June 2004

Authors:

Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Aluminum (Al), Bunching, Chemical Vapor Deposition (CVD), Facet, Zigzag Step

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References

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