Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

Hideharu Matsuura; K. Aso; S. Kagamihara; Hisaomi Iwata; T. Ishida; K. Nishikawa

doi:10.4028/www.scientific.net/MSF.457-460.751

Paper Titles

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739

Formation of SiC Delta-Doped-Layer Structures by CVD
p.743

As-Grown 4H-SiC Epilayers with Magnetic Properties
p.747

Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
p.751

Non-Contact Doping Profiling in Epitaxial SiC
p.755

Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
p.759

Spin-On Doping of Porous SiC with Er
p.763

Sc Impurity in Silicon Carbide
p.767

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Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC

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Materials Science Forum (Volumes 457-460)

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751-754

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https://doi.org/10.4028/www.scientific.net/MSF.457-460.751

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Online since:

June 2004

Authors:

Hideharu Matsuura, K. Aso, S. Kagamihara, Hisaomi Iwata, T. Ishida, K. Nishikawa

Keywords:

Electron Irradiation, Free Carrier Concentration Spectroscopy, Hall-Effect Measurement, Reduction in Acceptors, Temperature Dependence of Hole Concentration

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