Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727
p.727
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731
p.731
Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735
p.735
Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739
p.739
Formation of SiC Delta-Doped-Layer Structures by CVD
p.743
p.743
As-Grown 4H-SiC Epilayers with Magnetic Properties
p.747
p.747
Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
p.751
p.751
Non-Contact Doping Profiling in Epitaxial SiC
p.755
p.755
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
p.759
p.759
Formation of SiC Delta-Doped-Layer Structures by CVD
Abstract:
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Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
743-746
Citation:
Online since:
June 2004
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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