Paper Titles

The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
p.715

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
p.719

In-Situ Er-Doping of SiC Bulk Single Crystals
p.723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
p.735

Relationship between Surface Structures and Aluminium Incorporation Behaviour of SiC in Chemical Vapor Deposition
p.739

Formation of SiC Delta-Doped-Layer Structures by CVD
p.743

As-Grown 4H-SiC Epilayers with Magnetic Properties
p.747

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Nitrogen Doping of Epitaxial SiC: Experimental...

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2003

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

731-734

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.731

Citation:

Cite this paper

Online since:

June 2004

Authors:

Jérôme Mezière, Pierre Ferret, Elisabeth Blanquet, Michel Pons, Lea Di Cioccio, Thierry Billon

Keywords:

Chemical Vapor Deposition (CVD), Doping, Hydrogen Etching, Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Ö. Danielsson, U. Forsberg, A. Henry, E. Janzen : J. Cryst. Growth Vol 235 (2002), p.352.

[2] M. Pons, J. Meziere , JM. Dedulle, S. Wan Tan Kuan, E. Blanquet, C. Bernard, P. Ferret, L. Di Cioccio, T. Billon, R. Madar : J. de Phys. IV, 11 (PR3) (2001), p.1079.

DOI: 10.1051/jp4:20013135

[3] Ö. Danielsson, A. Henry, E. Janzen : J. Cryst. Growth Vol 243 (2002), p.170.

[4] J. Meziere , M. Pons, JM. Dedulle, E. Blanquet L. Di Cioccio, P. Ferret : Mat. Res. Soc. Symp. Proc., (2003) p.742.

[5] Ö. Danielsson, U. Forsberg, E. Janzen : J. Cryst. Growth Vol 250 (2003), p.471.

[6] J. Mézière, M. Pons , J.M. Dedulle , E. Blanquet , P. Ferret , L. Di Cioccio , T. Billon : Mater. Sci. Forum Vol 433-436 (2003), p.141.

DOI: 10.4028/www.scientific.net/msf.433-436.141