Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

731-734

DOI:

10.4028/www.scientific.net/MSF.457-460.731

Citation:

J. Mezière et al., "Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth", Materials Science Forum, Vols. 457-460, pp. 731-734, 2004

Online since:

June 2004

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