The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study

M. Bockstedte; Alexander Mattausch; Oleg Pankratov

doi:10.4028/www.scientific.net/MSF.457-460.715

Paper Titles

As-Grown and Process-Related Defects in Schottky Barrier Diodes Fabricated on Bulk Off-Axis n-Type 6H-SiC
p.697

Impact Ionization in α-SiC and Avalanche Photoamplifiers
p.701

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
p.705

The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
p.711

The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
p.715

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
p.719

In-Situ Er-Doping of SiC Bulk Single Crystals
p.723

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
p.727

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
p.731

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The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

715-718

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.715

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Online since:

June 2004

Authors:

M. Bockstedte, Alexander Mattausch, Oleg Pankratov

Keywords:

Critical Nitrogen Concentration, Electrical Activation, Nitrogen-Vacancy Complex

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