Paper Title:
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
715-718
DOI
10.4028/www.scientific.net/MSF.457-460.715
Citation
M. Bockstedte, A. Mattausch, O. Pankratov, "The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study ", Materials Science Forum, Vols. 457-460, pp. 715-718, 2004
Online since
June 2004
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